IXFN38 Series

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

Catalog

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

Part	Vgs(th) (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Mounting Type	Package Name	Vgs (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
LITTELFUSE IXFN38N80Q2	4.5 V	735 W	10 V	220 mOhm	800 V	N-Channel	miniBLOC SOT-227-4	190 nC	38 A	MOSFET (Metal Oxide)	Chassis Mount	SOT-227B	30 V	8340 pF	-55 °C	150 °C
LITTELFUSE IXFN38N100P	6.5 V	1000 W	10 V	210 mOhm	1000 V	N-Channel	miniBLOC SOT-227-4	350 nC	38 A	MOSFET (Metal Oxide)	Chassis Mount	SOT-227B	30 V	24000 pF	-55 °C	150 °C
LITTELFUSE IXFN38N100Q2	5 V	890 W	10 V	250 mOhm	1000 V	N-Channel	miniBLOC SOT-227-4	250 nC	38 A	MOSFET (Metal Oxide)	Chassis Mount	SOT-227B	30 V	7200 pF	-55 °C	150 °C
LITTELFUSE IXFN38N100P	6.5 V	1000 W	10 V	210 mOhm	1000 V	N-Channel	miniBLOC SOT-227-4	350 nC	38 A	MOSFET (Metal Oxide)	Chassis Mount	SOT-227B	30 V	24000 pF	-55 °C	150 °C

Catalog

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

Description

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Advantages: Easy to mount High power density Space savings