Catalog
Very fast "H" series
Description
AI
This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
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Very fast "H" series
Very fast "H" series
| Part | Package / Case | Switching Energy (Off) | Switching Energy (On) | Td (on) @ 25°C | Td (off) @ 25°C | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Current - Collector (Ic) (Max) | Gate Charge | Package Name | Current - Collector Pulsed (Icm) | Input Type | Test Condition Resistance | Test Condition Voltage | Test Condition Current | Test Condition Voltage (Secondary) | Reverse Recovery Time (trr) | Power - Max | Vce(on) (Max) | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-220-3 | 95 µJ | 31.8 µJ | 14.2 ns | 72 ns | Through Hole | -55 °C | 150 °C | 20 A | 19.2 nC | TO-220 | 30 A | Standard | 10 Ohm | 390 V | 5 A | 15 V | 22 ns | 65 VA | 2.5 V | 600 V |