IMW120 Series

Manufacturer: INFINEON

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 36 A, 1.2 KV, 0.078 OHM, TO-247

Part	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Mounting Type	FET Type	Vgs(th) (Max)	Technology	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs (Max) Positive	Vgs (Max) Negative	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IMW120R060M1HXKSA1	TO-247-3	18 V	15 V	78 mOhm	Through Hole	N-Channel	5.7 V	SiCFET (Silicon Carbide)	1060 pF	150 W	23 V	-7 V	31 nC	-55 °C	175 °C	1200 V	PG-TO247-3-41	36 A
INFINEON IMW120R045M1XKSA1	TO-247-3			59 mOhm	Through Hole	N-Channel	5.7 V	SiCFET (Silicon Carbide)	1900 pF	228 W	20 V	-10 V	52 nC	-55 °C	175 °C	1200 V	PG-TO247-3-41	52 A	15 V
INFINEON IMW120R350M1HXKSA1	TO-247-3	18 V	15 V	455 mOhm	Through Hole	N-Channel	5.7 V	SiCFET (Silicon Carbide)	182 pF 182 pF	60 W	23 V	-7 V	5.3 nC	-55 °C	175 °C	1200 V	PG-TO247-3-41	4.7 A
INFINEON IMW120R030M1HXKSA1	TO-247-3	18 V	15 V	40 mOhm	Through Hole	N-Channel	5.7 V	SiCFET (Silicon Carbide)	2120 pF	227 W	23 V	-7 V	63 nC	-55 °C	175 °C	1200 V	PG-TO247-3-41	56 A