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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Power Dissipation (Max) | FET Type | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Rds On (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 8.3 W 660 mW | N-Channel | 266 pF | 2.5 V | 20 V | 10 V | 4.5 V | TO-236AB | 30 V | 4.4 A | 8 nC | 37 mOhm | Surface Mount | -55 °C | 175 °C | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 |