STS10DN3LH5 Series

Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET

Catalog

Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET

Part	Supplier Device Package	FET Feature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STS10DN3LH5	8-SOIC	Logic Level Gate	21 mOhm	10 A	30 V	8-SOIC	3.9 mm	0.154 in	475 pF	4.6 nC	Surface Mount	MOSFET (Metal Oxide)	2.5 W	1 V	2 N-Channel (Dual)	-55 °C	150 °C

Catalog

Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET

Description

This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.