IRS2109 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Gate Type | Logic Voltage - VIL | Logic Voltage - VIH | High Side Voltage - Max (Bootstrap) | Package Name | Rise Time (Typ) | Fall Time (Typ) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Peak Output (Sink) | Current - Peak Output (Source) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Input Type | Package Length | Package Width | Driven Configuration | Gate Channel | Number of Drivers | Mounting Type | Channel Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 2.5 V | 600 V | 8-DIP 8-PDIP | 100 ns | 35 ns | -40 °C | 150 °C | 600 mA | 290 mA | 10 VDC | 20 V | Non-Inverting | 0.3 in | 7.62 mm | Half-Bridge | N-Channel | 2 | Through Hole | Synchronous |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 2.5 V | 600 V | 8-SOIC | 100 ns | 35 ns | -40 °C | 150 °C | 600 mA | 290 mA | 10 VDC | 20 V | Non-Inverting | 0.154 in | 3.9 mm | Half-Bridge | N-Channel | 2 | Surface Mount | Synchronous |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 2.5 V | 600 V | 8-DIP 8-PDIP | 100 ns | 35 ns | -40 °C | 150 °C | 600 mA | 290 mA | 10 VDC | 20 V | Non-Inverting | 0.3 in | 7.62 mm | Half-Bridge | N-Channel | 2 | Through Hole | Synchronous |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 2.5 V | 600 V | 8-SOIC | 100 ns | 35 ns | -40 °C | 150 °C | 600 mA | 290 mA | 10 VDC | 20 V | Non-Inverting | 0.154 in | 3.9 mm | Half-Bridge | N-Channel | 2 | Surface Mount | Synchronous |
INFINEON | Half-Bridge |