Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Power Dissipation (Max) | Mounting Type | Rds On (Max) | Technology | Package Name | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 30 V | 4.4 A | 2 V | 5 W 500 mW | Surface Mount | 36 mOhm | MOSFET (Metal Oxide) | TO-236AB | SC-59 SOT-23-3 TO-236-3 | 10 V | 4.5 V | 9 nC | 281 pF | -55 °C | 150 °C | N-Channel | 20 V |