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Dual N-Channel Enhancement Mode MOSFET
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Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Configuration | Grade | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Power - Max [Max] | Qualification | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8-SOIC | 3.9 mm | 0.154 in | 4 Ohm | 2 N-Channel (Dual) | Automotive | MOSFET (Metal Oxide) | 256 pF | 4.5 V | 8-SO | -55 °C | 150 °C | 6.9 nC | Surface Mount | 1.64 W | AEC-Q101 | 500 mA | 450 V |