TLP781F Series | Toshiba Semiconductor and Storage | Zenode.ai

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Part	Package Width	Package Name	Package Length	Rise Time (Typ)	Fall Time (Typ)	Number of Channels	Operating Temperature (Max)	Operating Temperature (Min)	Voltage - Forward (Vf) (Typ)	Output Type	Input Type	Vce Saturation (Max)	Current - Output / Channel	Current Transfer Ratio (Min)	Current - DC Forward (If) (Max)	Voltage - Isolation	Current Transfer Ratio (Max)	Turn On Time (Typ)	Turn Off Time (Typ)	Mounting Type	Voltage - Output (Max)	Package / Case
Toshiba Semiconductor and Storage TLP781F(D4GRT7TC,F	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	100 %	60 mA	5000 Vrms	300 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(D4-BLL,F)	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	200 %	60 mA	5000 Vrms	400 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(D4-Y,F)	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	50 %	60 mA	5000 Vrms	150 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(D4-GRH,F)	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	150 %	60 mA	5000 Vrms	300 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(D4-Y-TP7,F		4-SMD		2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	50 %	60 mA	5000 Vrms	150 %	3 µs	3 µs	Surface Mount	80 V	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781F(D4ADGBT7,F	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	100 %	60 mA	5000 Vrms	600 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(D4GRL-T7,F	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	100 %	60 mA	5000 Vrms	200 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(BL-LF7,F)		4-SMD		2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	200 %	60 mA	5000 Vrms	600 %	3 µs	3 µs	Surface Mount	80 V	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781F(D4-FUNGB,F	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	100 %	60 mA	5000 Vrms	600 %	3 µs	3 µs	Through Hole	80 V
Toshiba Semiconductor and Storage TLP781F(D4-FUN,F)	10.16 mm	4-DIP	10.16 mm	2 µs	3 µs	1	110 °C	-55 °C	1.15 V	Transistor	DC	400 mV	50 mA	50 %	60 mA	5000 Vrms	600 %	3 µs	3 µs	Through Hole	80 V