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110 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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110 V, N-channel Trench MOSFET
110 V, N-channel Trench MOSFET
| Part | Package / Case | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) | Package Name | FET Type | Rds On (Max) | Input Capacitance (Ciss) (Max) | Technology | Vgs (Max) | Gate Charge (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-UDFN Exposed Pad | 5 A | 110 V | 13 W 580 mW | 1.4 V | DFN2020M-6 | N-Channel | 70 mOhm | 741.5 pF | MOSFET (Metal Oxide) | 12 V | 6.7 nC | 2.5 V | 4.5 V | Surface Mount | -55 °C | 150 °C |