IXTA1 Series

Manufacturer: IXYS

Catalog

MOSFET N-CH 1000V 1A TO263

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
IXYS IXTA1N100P	20 V	1000 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	15.5 nC	10 V	-55 °C	150 °C	50 W	Surface Mount	331 pF	TO-263AA	15 Ohm	1 A	4.5 V
IXYS IXTA1N100	30 V	1000 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	14.5 nC	10 V	-55 °C	150 °C	54 W	Surface Mount	400 pF	TO-263AA	11 Ohm	1.5 A	4.5 V