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IR MOSFET™ N-CHANNEL POWER MOSFET ; SUPERSO8 5X6 PACKAGE; 14.4 MOHM;
| Part | Supplier Device Package | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 3.6 W 46 W | 35 nC | -55 °C | 150 °C | 8-PowerVDFN | N-Channel | MOSFET (Metal Oxide) | 11 A 40 A | 4 V | 60 V | 1256 pF | 20 V | 10 V | 14.4 mOhm |