DMP4013LFGQ Series

40V P-Channel Enhancement Mode MOSFET

Catalog

40V P-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Mounting Type	Package / Case	Qualification	Technology	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP4013LFGQ-7	4.5 V 10 V	20 V	3 V	-55 °C	150 °C	10.3 A	13 mOhm	POWERDI3333-8	P-Channel	Surface Mount	8-PowerVDFN	AEC-Q101	MOSFET (Metal Oxide)	40 V	Automotive	1 W	68.6 nC
Diodes Inc DMP4013LFGQ-13	4.5 V 10 V	20 V	3 V	-55 °C	150 °C	10.3 A	13 mOhm	POWERDI3333-8	P-Channel	Surface Mount	8-PowerVDFN	AEC-Q101	MOSFET (Metal Oxide)	40 V	Automotive	1 W	68.6 nC

Catalog

40V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher

• Density End Products

• Occupies 33% of the Board Area Occupied by SO-8, Enabling Smaller End Product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMP4013LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: reverse-polarity protections, power-management functions, and DC-DC converters.