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MOSFET N-CH 30V 35A TO251-3
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 38 W | 30 V | 4.5 V 10 V | 20 V | PG-TO251-3-21 | N-Channel | -55 °C | 175 ░C | 1500 pF | Through Hole | 10.5 mOhm | 35 A | IPAK TO-251-3 Short Leads TO-251AA | MOSFET (Metal Oxide) | 2.2 V | 14 nC |