IC NVSRAM 8MBIT PARALLEL 36EDIP
| Part | Access Time | Package / Case | Package / Case | Memory Organization [custom] | Memory Organization [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Technology | Memory Size | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Supplier Device Package | Memory Type | Memory Interface | Memory Format | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1265W-100+ | 100 ns | 36-DIP Module | 0.61 ", 15.49 mm | 1 M | 8 bits | 3.6 V | 3 V | Through Hole | NVSRAM (Non-Volatile SRAM) | 1024 KB | 70 °C | 0 °C | 100 ns | 100 ns | 36-EDIP | Non-Volatile | Parallel | NVSRAM | |
Analog Devices Inc./Maxim Integrated DS1265W-150+ | 150 ns | 36-DIP Module | 0.61 ", 15.49 mm | 1 M | 8 bits | 3.6 V | 3 V | Through Hole | NVSRAM (Non-Volatile SRAM) | 1024 KB | 70 °C | 0 °C | 36-EDIP | Non-Volatile | Parallel | NVSRAM | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1265W-100IND | 100 ns | 36-DIP Module | 0.61 ", 15.49 mm | 1 M | 8 bits | 3.6 V | 3 V | Through Hole | NVSRAM (Non-Volatile SRAM) | 1024 KB | 85 °C | -40 °C | 100 ns | 100 ns | 36-EDIP | Non-Volatile | Parallel | NVSRAM |