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MOSFET N-CH 200V 33A TO263
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-263 (D2PAK) | -55 °C | 175 ░C | 4.5 V | 2735 pF | 25 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 33 A | 3.12 W 156 W | Surface Mount | 200 V | 10 V 15 V | 113 nC | N-Channel | 59 mOhm |