BSZ0902 Series

Catalog

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 2.6 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies BSZ0902NSATMA1	4.5 V 10 V	N-Channel	-55 °C	150 °C	8-PowerTDFN	2.1 W 48 W	1700 pF	20 V	26 nC	2 V	Surface Mount	MOSFET (Metal Oxide)	2.6 mOhm	30 V	19 A 40 A
Infineon Technologies BSZ0902NSIATMA1	4.5 V 10 V	N-Channel	-55 °C	150 °C	8-PowerTDFN	2.5 W 48 W	1500 pF	20 V	24 nC	2 V	Surface Mount	MOSFET (Metal Oxide)	2.8 mOhm	30 V	21 A 40 A