IC FLASH 128MBIT SPI/QUAD 8USON
| Part | Clock Frequency | Supplier Device Package | Memory Organization | Memory Format | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Memory Size | Package / Case | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Technology | Access Time | Memory Type | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25LE128EQIGR | 133 MHz | 8-USON (4x4) | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 8-XDFN Exposed Pad | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 85 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited GD25LE128EWJGY | 133 MHz | 8-WSON (5x6) | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 8-WDFN Exposed Pad | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 105 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited GD25LE128EWIGR | 133 MHz | 8-WSON (5x6) | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 8-WDFN Exposed Pad | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 85 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited GD25LE128ELIGR | 133 MHz | 16-WLCSP | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 16-XFBGA, WLCSP | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 85 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited GD25LE128ESIGR | 133 MHz | 8-SOP | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 8-SOIC | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 85 °C | -40 °C | 5.3 mm | 0.209 " |
GigaDevice Semiconductor (HK) Limited GD25LE128E3IRR | 133 MHz | 26-WLCSP | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 26-XFBGA, WLCSP | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 85 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited GD25LE128EQEGR | 133 MHz | 8-USON (4x4) | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 8-XDFN Exposed Pad | 100 µs | 4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 125 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited GD25LE128EWJGR | 133 MHz | 8-WSON (5x6) | 16M x 8 | FLASH | 2 V | 1.65 V | Surface Mount | 128 Mb | 8-WDFN Exposed Pad | 60 µs | 2.4 ms | FLASH - NOR (SLC) | 6 ns | Non-Volatile | QPI, Quad I/O, SPI | 105 °C | -40 °C |