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IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 6.5 MOHM;
| Part | Technology | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | Surface Mount | 2 V | 8-SOIC | 3.9 mm | 0.154 in | 3640 pF | 20 V | N-Channel | 6.5 mOhm | 2.5 W | -55 °C | 150 °C | 8-SO | 62 nC | 12 V | 2.8 V 10 V |