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RES 1 OHM 2W 0.1% WW AXIAL

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PartTemperature CoefficientToleranceSupplier Device PackagePower (Watts)CompositionNumber of TerminationsResistanceFailure RateOperating Temperature [Min]Operating Temperature [Max]Size / Dimension [x]Size / Dimension [diameter]Size / Dimension [diameter]Size / Dimension [x]Package / CaseFeatures
Vishay General Semiconductor - Diodes Division
400 ppm/°C
0.1 %
Axial
2 W
Wirewound
2
1 Ohms
R (0.01%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
400 ppm/°C
1 %
Axial
2 W
Wirewound
2
1 Ohms
R (0.01%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
50 ppm/°C
1 %
Axial
2 W
Wirewound
2
10 Ohms
R (0.01%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
20 ppm/°C
1 %
Axial
2 W
Wirewound
2
12.1 kOhms
R (0.01%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
400 ppm/°C
1 %
Axial
2 W
Wirewound
2
511 mOhms
R (0.01%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
20 ppm/°C
1 %
Axial
2 W
Wirewound
2
1000 Ohms
M (1%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Military
Moisture Resistant
Non-Inductive
Vishay General Semiconductor - Diodes Division
20 ppm/°C
1 %
Axial
2 W
Wirewound
2
221 Ohms
S (0.001%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
30 ppm/°C
1 %
Axial
2 W
Wirewound
2
20 Ohms
S (0.001%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
30 ppm/°C
1 %
Axial
2 W
Wirewound
2
24.9 Ohms
S (0.001%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial
Vishay General Semiconductor - Diodes Division
20 ppm/°C
1 %
Axial
2 W
Wirewound
2
181 Ohms
R (0.01%)
-55 °C
250 °C
20.62 mm
4.75 mm
0.187 in
0.812 in
Axial