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IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 1 MOHM;
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 11880 pF | -55 °C | 175 ░C | 40 V | MOSFET (Metal Oxide) | 46 A 270 A | DirectFET™ Isometric L8 | 4 V | 20 V | 330 nC | 1 mOhm | DirectFET™ Isometric L8 | N-Channel | Surface Mount | 10 V | 3.8 W 125 W |