EGP30 Series

Catalog

DIODE GEN PURP 200V 3A GP20

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Voltage - Forward (Vf) (Max)	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Package Name	Package / Case	Current - Reverse Leakage	Current - Average Rectified (Io)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)
Vishay General Semiconductor - Diodes Division EGP30D-E3/73	150 °C	-65 °C	Standard	950 mV 950 mV	Through Hole	200 V	50 ns	GP20	Axial DO-201AA DO-27	5 µA	3 A	500 ns	200 mA
Vishay General Semiconductor - Diodes Division EGP30G-E3/54	150 °C	-65 °C	Standard	1.25 V	Through Hole	400 V	50 ns	GP20	Axial DO-201AA DO-27	5 µA	3 A	500 ns	200 mA
Vishay General Semiconductor - Diodes Division EGP30BHE3/54	150 °C	-65 °C	Standard	950 mV 950 mV	Through Hole	100 V	50 ns	GP20	Axial DO-201AA DO-27	5 µA	3 A	500 ns	200 mA
Vishay General Semiconductor - Diodes Division EGP30D-E3/54	150 °C	-65 °C	Standard	950 mV 950 mV	Through Hole	200 V	50 ns	GP20	Axial DO-201AA DO-27	5 µA	3 A	500 ns	200 mA
Vishay General Semiconductor - Diodes Division EGP30F-E3/54	150 °C	-65 °C	Standard	1.25 V	Through Hole	300 V	50 ns	GP20	Axial DO-201AA DO-27	5 µA	3 A	500 ns	200 mA