MOSFET N-CH 40V 120A D2PAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Package / Case | Technology | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 20 V | 120 A | N-Channel | 10 V | 5193 pF | 40 V | 161 nC | 163 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | Surface Mount | 3.9 V | 2.3 mOhm |
Infineon Technologies | -55 °C | 175 ░C | 20 V | 120 A | N-Channel | 10 V | 5193 pF | 40 V | 161 nC | 163 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | Surface Mount | 3.9 V | 2.3 mOhm |
Infineon Technologies | -55 °C | 175 ░C | 20 V | 120 A | N-Channel | 10 V | 5193 pF | 40 V | 161 nC | 163 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | Surface Mount | 3.9 V | 2.3 mOhm |
Infineon Technologies | -55 °C | 175 ░C | 20 V | 120 A | N-Channel | 10 V | 5193 pF | 40 V | 161 nC | 163 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | Surface Mount | 3.9 V | 2.3 mOhm |