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Complementary Pair Enhancement Mode MOSFET
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Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Configuration | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2.5 W | 404.5 pF | 2.1 V | N and P-Channel | Surface Mount | 7 A 8.1 A | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 30 V | 8-SO | 9.2 nC | MOSFET (Metal Oxide) | 32 mOhm | Logic Level Gate |