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100 V N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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100 V N-channel Trench MOSFET
100 V N-channel Trench MOSFET
| Part | Qualification | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Current - Continuous Drain (Id) (Ta) | Package Name | Input Capacitance (Ciss) (Max) | Package / Case | Vgs(th) (Max) | Gate Charge (Max) | Mounting Type | Rds On (Max) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | AEC-Q101 | 770 mW | 100 V | -55 °C | 150 °C | N-Channel | 1.5 A | SOT-223 | 195 pF | TO-261-4 TO-261AA | 2.7 V | 6.8 nC | Surface Mount | 385 mOhm | MOSFET (Metal Oxide) | 10 V | 4.5 V | 20 V | Automotive |