IC DRAM 256MBIT PAR 90VFBGA
| Part | Memory Size | Memory Type | Clock Frequency | Package / Case | Memory Interface | Mounting Type | Memory Organization | Technology | Supplier Device Package | Memory Format | Access Time | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 256 Gbit | Volatile | 100 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 70 °C | 0 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 100 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 85 °C | -40 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 125 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 85 °C | -40 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 125 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 85 °C | -40 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 100 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 70 °C | 0 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 100 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 70 °C | 0 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 100 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 85 °C | -40 °C | 3.6 V | 3 V |
Micron Technology Inc. | 256 Gbit | Volatile | 100 MHz | 90-VFBGA | Parallel | Surface Mount | 8M x 32 | SDRAM - Mobile LPSDR | 90-VFBGA (8x13) | DRAM | 7 ns | 15 ns | 85 °C | -40 °C | 3.6 V | 3 V |