IPD105N Series

Catalog

MOSFET N-CH 30V 35A TO252-3

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPD105N03LGATMA1	10.5 mOhm	38 W	2.2 V	Surface Mount	PG-TO252-3-11	-55 °C	175 ░C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	14 nC	20 V	1500 pF	35 A	30 V	N-Channel	4.5 V 10 V
Infineon Technologies IPD105N04LGBTMA1	10.5 mOhm	42 W		Surface Mount	PG-TO252-3	-55 °C	175 ░C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	23 nC	20 V			40 V	N-Channel	4.5 V 10 V	2 V	1900 pF