SFH610 Series
Manufacturer: Vishay Semiconductor Opto Division
OPTOISOLATOR 5.3KV TRANS 4-DIP
| Part | Input Type | Package Name | Output Type | Voltage - Output (Max) | Current Transfer Ratio (Max) | Voltage - Forward (Vf) (Typ) | Turn On Time (Typ) | Turn Off Time (Typ) | Mounting Type | Voltage - Isolation | Package Width | Package Length | Rise Time (Typ) | Fall Time (Typ) | Number of Channels | Current - DC Forward (If) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vce Saturation (Max) | Current Transfer Ratio (Min) | Current - Output / Channel | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 125 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 7.62 mm | 0.3 in | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 63 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 200 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 7.62 mm | 0.3 in | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 100 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 125 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 7.62 mm | 0.3 in | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 63 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 200 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 10.16 mm | 10.16 mm | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 100 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 320 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 7.62 mm | 0.3 in | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 160 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-SMD | Transistor | 70 V | 320 % | 1.25 V | 3 µs | 2.3 µs | Surface Mount | 5.3 kV | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 160 % | 50 mA | 4-SMD Gull Wing | ||
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 80 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 7.62 mm | 0.3 in | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 40 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 125 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 10.16 mm | 10.16 mm | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 63 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 80 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 7.62 mm | 0.3 in | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 40 % | 50 mA | |
Vishay Semiconductor Opto Division | DC | 4-DIP | Transistor | 70 V | 320 % | 1.25 V | 3 µs | 2.3 µs | Through Hole | 5.3 kV | 10.16 mm | 10.16 mm | 2 µs | 2 µs | 1 | 60 mA | -55 °C | 100 °C | 400 mV | 160 % | 50 mA |