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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Grade | Rds On (Max) | FET Type | Input Capacitance (Ciss) (Max) | Technology | Package / Case | Vgs(th) (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | Package Name | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Vgs (Max) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 60 mOhm | P-Channel | 744 pF | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 1 V | 12 nC | 3.6 A | 4.5 V | 1.8 V | 4.63 W 490 mW | TO-236AB | 20 V | -55 °C | 150 °C | Surface Mount | 10 V | AEC-Q101 |