PHKD6 Series
Manufacturer: Nexperia USA Inc.
MOSFET 2N-CH 20V 10.9A 8SO
| Part | Package Length | Package Name | Package Width | Gate Charge (Max) | Power - Max | Drain to Source Voltage (Vdss) | Technology | FET Feature | Vgs(th) (Max) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Channel Count | Configuration | Configuration - Features | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 15.3 nC | 4.17 W | 20 V | MOSFET (Metal Oxide) | Logic Level Gate | 1.5 V | 20 mOhm | 950 pF | 2 | N-Channel | Dual | -55 °C | 150 °C | 10.9 A | Surface Mount |