IPI80P Series
Manufacturer: INFINEON
MOSFET P-CH 30V 80A TO262-3
| Part | Qualification | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Vgs(th) (Max) | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Package Name | Mounting Type | Grade | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | AEC-Q101 | 10 V | 4.5 V | MOSFET (Metal Oxide) | 2 V | P-Channel | 30 V | I2PAK TO-262-3 Long Leads TO-262AA | 88 W | -55 °C | 175 °C | -16 V | 5 V | PG-TO262-3 | Through Hole | Automotive | 7.2 mOhm | 80 A | 80 nC 80 nC | 5700 pF | ||
INFINEON | AEC-Q101 | MOSFET (Metal Oxide) | 4 V | P-Channel | 40 V | I2PAK TO-262-3 Long Leads TO-262AA | 125 W | -55 °C | 175 °C | PG-TO262-3-1 | Through Hole | Automotive | 5.2 mOhm | 80 A | 151 nC | 10300 pF | 20 V | 10 V | ||||
INFINEON | AEC-Q101 | 10 V | 4.5 V | MOSFET (Metal Oxide) | 2.2 V | P-Channel | 40 V | I2PAK TO-262-3 Long Leads TO-262AA | 125 W | -55 °C | 175 °C | -16 V | 5 V | PG-TO262-3-1 | Through Hole | Automotive | 4.7 mOhm | 80 A | 176 nC | 3800 pF |