LTC4449 Series

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

IC GATE DRVR HALF-BRIDGE 8DFN

Part	Gate Type	Operating Temperature (Max)	Operating Temperature (Min)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel	Driven Configuration	Logic Voltage - VIH	Logic Voltage - VIL	Package Length	Package Name	Package Width	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	High Side Voltage - Max (Bootstrap)	Mounting Type	Package / Case	Fall Time (Typ)	Rise Time (Typ)	Number of Drivers	Channel Type
Analog Devices Inc./Maxim Integrated LTC4449EDCB	MOSFET N-Channel MOSFET	125 °C	-40 °C	4.5 A	3.2 A	N-Channel	Half-Bridge	6.5 V	3 V	2 mm	8-DFN	3 mm	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449IDCB#TRPBF	MOSFET N-Channel MOSFET	125 °C	-40 °C	4.5 A	3.2 A	N-Channel	Half-Bridge	6.5 V	3 V	2 mm	8-DFN	3 mm	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449EDCB#TRMPBF	MOSFET N-Channel MOSFET	125 °C	-40 °C	4.5 A	3.2 A	N-Channel	Half-Bridge	6.5 V	3 V	2 mm	8-DFN	3 mm	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449EDCB#TRPBF	MOSFET N-Channel MOSFET	125 °C	-40 °C	4.5 A	3.2 A	N-Channel	Half-Bridge	6.5 V	3 V	2 mm	8-DFN	3 mm	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449IDCB	MOSFET N-Channel MOSFET	125 °C	-40 °C	4.5 A	3.2 A	N-Channel	Half-Bridge	6.5 V	3 V	2 mm	8-DFN	3 mm	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449IDCB#TRMPBF	MOSFET N-Channel MOSFET	125 °C	-40 °C	4.5 A	3.2 A	N-Channel	Half-Bridge	6.5 V	3 V	2 mm	8-DFN	3 mm	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous