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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Qualification | Mounting Type | Grade | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) | Technology | Power Dissipation (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Gate Charge (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.3 V | 20 V | AEC-Q101 | Surface Mount | Automotive | SC-59 SOT-23-3 TO-236-3 | 12 V | 931 pF | MOSFET (Metal Oxide) | 8.3 W 610 mW | 2.5 V | 8 V | 15 nC | 15 mOhm | 7.3 A | TO-236AB | -55 °C | 175 °C | N-Channel |