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IGBTs
IGBTs
| Part | Vce(on) (Max) | Package / Case | Power - Max | Input Type | Reverse Recovery Time (trr) | Test Condition Voltage | Test Condition Resistance | Test Condition Voltage (Secondary) | Test Condition Current | Gate Charge | Switching Energy (Off) | Switching Energy (On) | Mounting Type | Td (on) @ 25°C | Td (off) @ 25°C | Operating Temperature | Current - Collector (Ic) (Max) | Package Name | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1.8 V | SC-65-3 TO-3P-3 | 200 W | Standard | 200 ns | 400 V | 56 Ohm | 15 V | 15 A | 70 nC | 220 µJ | 1.4 mJ | Through Hole | 75 ns | 400 ns | 175 °C | 60 A | TO-3P(N) | 650 V |