ISL89163 Series

Manufacturer: Renesas Electronics Corporation

Catalog

HIGH SPEED, DUAL CHANNEL, 6A, POWER MOSFET DRIVER WITH ENABLE INPUTS

Part	Gate Type	Gate Channel	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Rise Time (Typ)	Fall Time (Typ)	Mounting Type	Input Type	Logic Voltage - VIH	Logic Voltage - VIL	Package Width	Package Name	Package Length	Current - Peak Output (Source)	Current - Peak Output (Sink)	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Channel Type	Driven Configuration	Package Features
Renesas Electronics Corporation ISL89163FRTBZ-T	MOSFET N-Channel MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	3.15 V	1.85 V	3 mm	8-TDFN	3 mm	6 A	6 A	8-WDFN Exposed Pad	125 °C	-40 °C	Independent	Low-Side
Renesas Electronics Corporation ISL89163FRTAZ	MOSFET N-Channel MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	2.08 V	1.22 V	3 mm	8-TDFN	3 mm	6 A	6 A	8-WDFN Exposed Pad	125 °C	-40 °C	Independent	Low-Side
Renesas Electronics Corporation ISL89163FRTBZ	MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	3.15 V	1.85 V	3 mm	8-TDFN	3 mm	6 A	6 A	8-WDFN Exposed Pad	125 °C	-40 °C	Independent	Low-Side
Renesas Electronics Corporation ISL89163FBEAZ-T	MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	2.08 V	1.22 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	6 A	6 A		125 °C	-40 °C	Independent	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89163FBEBZ	MOSFET N-Channel MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	3.15 V	1.85 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	6 A	6 A		125 °C	-40 °C	Independent	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89163FBECZ	MOSFET N-Channel MOSFET	N-Channel	7.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	9.6 V	2.4 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	6 A	6 A		125 °C	-40 °C	Independent	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89163FRTAZ-T	MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	2.08 V	1.22 V	3 mm	8-TDFN	3 mm	6 A	6 A	8-WDFN Exposed Pad	125 °C	-40 °C	Independent	Low-Side
Renesas Electronics Corporation ISL89163FBEAZ	MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	2.08 V	1.22 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	6 A	6 A		125 °C	-40 °C	Independent	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89163FBEBZ-T	MOSFET	N-Channel	4.5 V	16 V	2	20 ns	20 ns	Surface Mount	Non-Inverting	3.15 V	1.85 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	6 A	6 A		125 °C	-40 °C	Independent	Low-Side	Exposed Pad