MOSFET P-CH 500V 10A TO268
| Part | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 10 V | 4700 pF | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 20 V | Surface Mount | -55 °C | 150 °C | 5 V | MOSFET (Metal Oxide) | TO-268AA | 900 mOhm | 10 A | P-Channel | 500 V | 160 nC | 300 W |