IC FLASH 2GBIT PARALLEL 63BGA
| Part | Memory Interface | Memory Organization | Write Cycle Time - Word, Page | Supplier Device Package | Memory Size | Package / Case | Memory Format | Memory Type | Technology | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Package / Case [y] | Package / Case [y] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Parallel | 256M x 8 | 25 ns | 63-BGA (11x9) | 2 Gbit | 63-VFBGA | FLASH | Non-Volatile | FLASH - NAND | Surface Mount | 2.7 V | 3.6 V | 85 °C | -40 °C | |||||
Infineon Technologies | Parallel | 256M x 8 | 25 ns | 63-BGA (11x9) | 2 Gbit | 63-VFBGA | FLASH | Non-Volatile | FLASH - NAND | Surface Mount | 2.7 V | 3.6 V | 105 °C | -40 °C | |||||
Infineon Technologies | Parallel | 25 ns | 63-BGA (11x9) | 2 Gbit | 63-VFBGA | FLASH | Non-Volatile | FLASH - NAND | Surface Mount | 2.7 V | 3.6 V | 85 °C | -40 °C | 128 M | |||||
Infineon Technologies | Parallel | 256M x 8 | 25 ns | 63-BGA (11x9) | 2 Gbit | 63-VFBGA | FLASH | Non-Volatile | FLASH - NAND | Surface Mount | 2.7 V | 3.6 V | 85 °C | -40 °C | |||||
Infineon Technologies | Parallel | 256M x 8 | 25 ns | 48-TSOP | 2 Gbit | 48-TFSOP | FLASH | Non-Volatile | FLASH - NAND | Surface Mount | 2.7 V | 3.6 V | 85 °C | -40 °C | 18.4 mm | 0.724 in | |||
Infineon Technologies | Parallel | 25 ns | 63-BGA (11x9) | 2 Gbit | 63-VFBGA | FLASH | Non-Volatile | FLASH - NAND | Surface Mount | 2.7 V | 3.6 V | 105 °C | -40 °C | 128 M | Automotive | AEC-Q100 |