IC DRAM 256MBIT PAR 66TSOP II
| Part | Memory Organization | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | Access Time | Memory Size | Package / Case [custom] | Package / Case | Package / Case [custom] | Memory Format |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Etron Technology, Inc. EM6AA160TSE-4IG | 16 M | Volatile | 85 °C | -40 °C | 66-TSOP II | Surface Mount | 2.7 V | 2.3 V | 250 MHz | Parallel | 15 ns | 700 ps | 256 Gbit | 0.4 in | 66-TSSOP | 0.4 in | DRAM |
Etron Technology, Inc. EM6AA160BKE-4IH | 16 M | Volatile | 85 °C | -40 °C | 60-FBGA (8x13) | Surface Mount | 2.7 V | 2.3 V | 250 MHz | Parallel | 15 ns | 700 ps | 256 Gbit | 60-TFBGA | DRAM | ||
Etron Technology, Inc. EM6AA160BKE-4H | 16 M | Volatile | 70 °C | 0 °C | 60-FBGA (8x13) | Surface Mount | 2.7 V | 2.3 V | 250 MHz | Parallel | 15 ns | 700 ps | 256 Gbit | 60-TFBGA | DRAM |