MOSFET P-CH 12V 8.9A 8SO
| Part | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.8 V 4.5 V | P-Channel | 1877 pF | Surface Mount | 8-SO | MOSFET (Metal Oxide) | 900 mV | 24 mOhm | -55 °C | 150 °C | 8.9 A | 20 nC | 2.5 W | 12 V | 8 V | 8-SOIC | 3.9 mm | 0.154 in |