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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) | Vgs (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Gate Charge (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.25 V | 12 V | TO-236AB | 4.5 V | 1.8 V | 30 V | N-Channel | SC-59 SOT-23-3 TO-236-3 | 1 A | 79.3 pF | 2.1 W 330 mW | Surface Mount | -55 °C | 150 °C | 270 mOhm | 1.2 nC | MOSFET (Metal Oxide) |