IC NVSRAM 2MBIT PARALLEL 32EDIP
Part | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case | Package / Case | Memory Format | Memory Interface | Memory Size | Supplier Device Package | Memory Organization [custom] | Memory Organization [custom] | Mounting Type | Access Time | Memory Type | Write Cycle Time - Word, Page |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1249W-100 | 100 ns | 100 ns | 70 °C | 0 °C | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Parallel | 2 Gbit | 32-EDIP | 256 K | 8 | Through Hole | 100 ns | Non-Volatile | |
Analog Devices Inc./Maxim Integrated DS1249W-150 | 70 °C | 0 °C | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Parallel | 2 Gbit | 32-EDIP | 256 K | 8 | Through Hole | 150 ns | Non-Volatile | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1249W-100# | 100 ns | 100 ns | 70 °C | 0 °C | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Parallel | 2 Gbit | 32-EDIP | 256 K | 8 | Through Hole | 100 ns | Non-Volatile | |
Analog Devices Inc./Maxim Integrated DS1249W-100IND | 100 ns | 100 ns | 85 °C | -40 °C | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Parallel | 2 Gbit | 32-EDIP | 256 K | 8 | Through Hole | 100 ns | Non-Volatile |