DMTH6010LPDWQ Series

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Power - Max	Qualification	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id
Diodes Inc DMTH6010LPDWQ-13	2.8 W 37.5 W	AEC-Q101	Surface Mount	8-PowerTDFN	13.1 A 47.6 A	40.2 nC	2 N-Channel (Dual)	-55 °C	175 ░C	11 mOhm	MOSFET (Metal Oxide)	60 V	Automotive	2615 pF	PowerDI5060-8 (Type UXD)	3 V

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DIODES™ DMTH6010LPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, DC-DC converters.