Catalog
650V, 15A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 15A, THD, Silicon-carbide (SiC) SBD
650V, 15A, THD, Silicon-carbide (SiC) SBD
| Part | Capacitance | Voltage - Forward (Vf) (Max) | Package / Case | Package Name | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Current - Reverse Leakage | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Technology | Operating Temperature - Junction | Reverse Recovery Time (trr) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 750 pF | 1.5 V | TO-220-2 | TO-220ACFP | 650 V | Through Hole | 75 µA | 500 mA | No Recovery Time | 500 mA 500 mA | SiC (Silicon Carbide) Schottky | 175 °C | 0 ns | 15 A |