Beta
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DIODE GEN PURP 600V 1A TS-1
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Speed | Package / Case | Technology | Current - Average Rectified (Io) | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | TS-1 | 200 mA 500 ns | T-18 Axial | Standard | 1 A | Through Hole | 1.7 V | 35 ns | 10 pF | 600 V | 5 µA |