
MCP1405 Series
Manufacturer: Microchip Technology
DUAL 4.5 A MOSFET GATE DRIVER
| Part | Package Name | Logic Voltage - VIH | Logic Voltage - VIL | Grade | Rise Time (Typ) | Fall Time (Typ) | Package Length | Package Width | Qualification | Current - Peak Output (Sink) | Current - Peak Output (Source) | Channel Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Gate Channel | Gate Type | Operating Temperature (Max) | Operating Temperature (Min) | Driven Configuration | Mounting Type | Number of Drivers | Input Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | 8-SOIC | 2.4 V | 0.8 V | Automotive | 15 ns | 18 ns | 0.154 in | 3.9 mm | AEC-Q100 | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET | 125 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting | |
Microchip Technology | 8-DIP 8-PDIP | 2.4 V | 0.8 V | 15 ns | 18 ns | 0.3 in | 7.62 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 150 °C | -40 °C | Low-Side | Through Hole | 2 | Inverting Non-Inverting | |||
Microchip Technology | 16-SOIC | 2.4 V | 0.8 V | 15 ns | 18 ns | 0.295 in | 7.5 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 150 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting | |||
Microchip Technology | 8-DFN-S | 2.4 V | 0.8 V | 15 ns | 18 ns | 6 mm | 5 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 150 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting | 8-VDFN Exposed Pad | ||
Microchip Technology | 8-SOIC | 2.4 V | 0.8 V | 15 ns | 18 ns | 0.154 in | 3.9 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 150 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting | |||
Microchip Technology | 8-SOIC | 2.4 V | 0.8 V | 15 ns | 18 ns | 0.154 in | 3.9 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 150 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting | |||
Microchip Technology | 8-DFN-S | 2.4 V | 0.8 V | 15 ns | 18 ns | 6 mm | 5 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 150 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting | 8-VDFN Exposed Pad | ||
Microchip Technology | 16-SOIC | 2.4 V | 0.8 V | 15 ns | 18 ns | 0.295 in | 7.5 mm | 4.5 A | 4.5 A | Independent | 18 V | 4.5 V | N-Channel P-Channel | IGBT MOSFET | 150 °C | -40 °C | Low-Side | Surface Mount | 2 | Inverting Non-Inverting |