20ETF08 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO220AC
| Part | Mounting Type | Package Name | Package / Case | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Technology | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Current - Reverse Leakage | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Through Hole | TO-220AC | TO-220-2 | 500 ns | 200 mA | Standard | -40 °C | 150 °C | 100 µA | 800 V | 95 ns | 1.3 V | 20 A |
Vishay General Semiconductor - Diodes Division | Surface Mount | TO-263AB (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 ns | 200 mA | Standard | -40 °C | 150 °C | 100 µA | 800 V | 95 ns | 1.31 V | 20 A |
Vishay General Semiconductor - Diodes Division | Surface Mount | TO-263AB (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 ns | 200 mA | Standard | -40 °C | 150 °C | 100 µA | 800 V | 400 ns | 1.31 V | 20 A |
Vishay General Semiconductor - Diodes Division | Surface Mount | TO-263AB (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 ns | 200 mA | Standard | -40 °C | 150 °C | 100 µA | 800 V | 400 ns | 1.31 V | 20 A |
Vishay General Semiconductor - Diodes Division | Through Hole | TO-220AC | TO-220-2 | 500 ns | 200 mA | Standard | -40 °C | 150 °C | 100 µA | 800 V | 400 ns | 1.31 V | 20 A |
Vishay General Semiconductor - Diodes Division | Surface Mount | TO-263AB (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 ns | 200 mA | Standard | -40 °C | 150 °C | 100 µA | 800 V | 400 ns | 1.31 V | 20 A |