6A10 Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
| Part | Package / Case | Current - Average Rectified (Io) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Voltage - DC Reverse (Vr) (Max) | Capacitance | Current - Reverse Leakage | Mounting Type | Package Name | Voltage - Forward (Vf) (Max) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Axial R-6 | 6 A | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 100 V | 60 pF | 10 µA | Through Hole | R-6 | 1.1 V | ||
Taiwan Semiconductor Corporation | Axial R-6 | 6 A | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 100 V | 60 pF | 10 µA | Through Hole | R-6 | 1.1 V | AEC-Q101 | Automotive |
Taiwan Semiconductor Corporation | Axial R-6 | 6 A | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 100 V | 60 pF | 10 µA | Through Hole | R-6 | 1.1 V |