DIODE GEN PURP 100V 6A R-6
| Part | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Current - Average Rectified (Io) | Technology | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Supplier Device Package | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Through Hole | 1.1 V | 100 V | 10 µA | 60 pF | 6 A | Standard | R-6 Axial | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | R-6 | ||
Taiwan Semiconductor Corporation | Through Hole | 1.1 V | 100 V | 10 µA | 60 pF | 6 A | Standard | R-6 Axial | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | R-6 | AEC-Q101 | Automotive |
Taiwan Semiconductor Corporation | Through Hole | 1.1 V | 100 V | 10 µA | 60 pF | 6 A | Standard | R-6 Axial | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | R-6 |