TJ60S04 Series

Catalog

MOSFET P-CH 40V 60A DPAK

Part	Technology	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TJ60S04M3L(T6L1,NQ	MOSFET (Metal Oxide)	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	DPAK+	6 V 10 V	60 A	6510 pF	90 W	Surface Mount	P-Channel	40 V	125 nC	-20 V	10 V	6.3 mOhm
Toshiba Semiconductor and Storage TJ60S04M3L,LXHQ	MOSFET (Metal Oxide)	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	DPAK+	6 V 10 V	60 A	6510 pF	90 W	Surface Mount	P-Channel	40 V	125 nC	-20 V	10 V	6.3 mOhm