IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 13 MOHM;
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2210 pF | 150 °C | -40 °C | DIRECTFET™ MN | 60 A | 10.3 A | DirectFET™ Isometric MN | 20 V | 13 mOhm | MOSFET (Metal Oxide) | 10 V | 2.8 W 89 W | N-Channel | 4.8 V | Surface Mount | 100 V |