MOSFET N-CH 800V 13A TO247AD
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 4200 pF | 800 mOhm | 300 W | MOSFET (Metal Oxide) | 800 V | 4.5 V | 13 A | 10 V | -55 °C | 150 °C | N-Channel | 155 nC | 20 V | Through Hole | TO-247-3 | TO-247AD (IXFH) | |||
IXYS | 2800 pF | 400 mOhm | MOSFET (Metal Oxide) | 500 V | 4 V | 13 A | 10 V | -55 °C | 150 °C | N-Channel | 20 V | Through Hole | TO-247-3 | TO-247AD (IXFH) | 120 nC | 180 W | |||
IXYS | 4000 pF | 300 W | MOSFET (Metal Oxide) | 1000 V | 4.5 V | 12.5 A | 10 V | -55 °C | 150 °C | N-Channel | 155 nC | 20 V | Through Hole | TO-247-3 | TO-247AD (IXFH) | 900 mOhm | |||
IXYS | 4200 pF | 800 mOhm | 300 W | MOSFET (Metal Oxide) | 900 V | 4.5 V | 13 A | 10 V | -55 °C | 150 °C | N-Channel | 155 nC | 20 V | Through Hole | TO-247-3 | TO-247AD (IXFH) |